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PD - 95034A SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use High Frequency Buck Converters for Computer Processor Power l 100% RG Tested l Lead-Free Benefits l Ultra-Low RDS(on) l l l IRFR3704PBF IRFU3704PbF HEXFET(R) Power MOSFET VDSS 20V RDS(on) max 9.5m ID 75A Very Low Gate Impedance Fully Characterized Avalanche Voltage and Current D-Pak IRFR3704 I-Pak IRFU3704 Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25C ID @ TC = 70C IDM PD @TC = 25C PD @TA = 70C TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max 20 20 75 63 300 90 62 0.58 -55 to +175 Units V c f f A Maximum Power Dissipation Maximum Power Dissipation e e W W/C C Linear Derating Factor Junction and Storage Temperature Range Thermal Resistance Symbol RJC RJA RJA Parameter Junction-to-Case g Typ --- --- --- Max 1.7 50 110 Units C/W Junction-to-Ambient (PCB Mount) *g Junction-to-Ambient g * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Notes through are on page 9 www.irf.com 1 12/13/04 IRFR/U3704PbF Static @ TJ = 25C (unless otherwise specified) Symbol V (BR)DSS V(BR)DSS/TJ RDS(on) V GS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min 20 --- --- --- 1.0 --- --- --- --- Typ --- 0.021 7.3 11 --- --- --- --- --- Max Units --- --- 9.5 14 3.0 10 100 200 -200 Conditions V V GS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m V A nA V GS = 10V, ID = 15A V GS = 4.5V, ID = 12A e e V DS = VGS, ID = 250A V DS = 20V, VGS = 0V V DS = 16V, VGS = 0V, TJ = 125C V GS = 16V V GS = -16V Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd QOSS RG td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min 42 --- --- --- --- 0.3 --- --- --- --- --- --- --- Typ --- 19 8.1 6.4 16 --- 8.4 98 12 5.0 1996 1085 155 Max Units --- --- --- --- 24 3.2 --- --- --- --- --- --- --- ns S nC Conditions V DS = 25V, ID = 57A ID = 28.4A V DS = 10V V GS = 4.5V V GS = 0V, VDS = 10V e V DD = 10V ID = 28.4A RG = 1.8 V GS = 4.5V V GS = 0V V DS = 10V = 1.0MHz e pF Avalanche Characteristics Symbol E AS IAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentA Typ --- --- Max 216 71 Units mJ A Diode Characteristics Symbol IS ISM V SD trr Qrr trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Min --- --- --- --- --- --- --- --- Typ --- --- 0.88 0.82 38 45 41 50 Max Units 75 Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 35.5A, VGS = 0V TJ = 125C, IS = 35.5A, VGS = 0V TJ = 25C, IF = 35.5A, V R = 20V di/dt = 100A/s f A V ns nC ns nC 300 1.3 --- 57 68 62 75 e e e e TJ = 125C, IF = 35.5A, VR= 20V di/dt = 100A/s 2 www.irf.com IRFR/U3704PbF 1000 VGS TOP 10.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V 1000 VGS 10.0V 9.00V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V TOP ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 100 3.5V 10 3.5V 10 20s PULSE WIDTH Tj = 25C 1 0.1 1 10 100 1 0.1 1 20s PULSE WIDTH Tj = 175C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 75A I D , Drain-to-Source Current (A) TJ = 25 C TJ = 175 C 100 1.5 1.0 0.5 10 3.0 V DS = 15V 20s PULSE WIDTH 4.0 5.0 6.0 7.0 8.0 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFR/U3704PbF 3000 2500 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = 28.4A VDS = 10V 8 C, Capacitance (pF) 2000 Ciss 6 1500 Coss 1000 4 500 2 Crss 0 1 10 100 0 0 10 20 30 40 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10us TJ = 175 C I D , Drain Current (A) 100 100 100us 10 TJ = 25 C 1ms 10 10ms 1 0.1 0.2 V GS = 0 V 0.5 0.8 1.1 1.4 1.7 2.0 1 0.1 TC = 25 C TJ = 175 C Single Pulse 1 10 100 VSD ,Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFR/U3704PbF 80 VDS LIMITED BY PACKAGE RD VGS RG 10V D.U.T. + ID , Drain Current (A) 60 -VDD 40 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRFR/U3704PbF RDS ( on ) , Drain-to-Source On Resistance ( ) RDS(on) , Drain-to -Source On Resistance ( ) 0.020 0.010 VGS = 4.5V 0.015 0.009 0.008 ID = 35.5A 0.010 VGS = 10V 0.007 0.005 0 50 100 150 200 250 300 ID , Drain Current ( A ) 0.006 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50K 12V .2F .3F VGS QGS D.U.T. + V - DS QG QGD 600 VG EAS , Single Pulse Avalanche Energy (mJ) VGS 3mA Charge IG ID 500 ID 11.6A 23.8A BOTTOM 28.4A TOP Current Sampling Resistors 400 Fig 14a&b. Basic Gate Charge Test Circuit and Waveforms 300 200 15V V(BR)DSS tp VDS L 100 DRIVER RG 20V D.U.T IAS + - VDD 0 25 50 75 100 125 150 175 A I AS tp 0.01 Starting TJ , Junction Temperature ( C) Fig 15a&b. Unclamped Inductive Test Circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRFR/U3704PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 1999 IN T HE ASSEMBLY LINE "A" Note: "P" in as sembly line position indicates "Lead-Free" PART NUMBER INTERNATIONAL RECT IFIER LOGO IRFU120 12 916A 34 ASSEMBLY LOT CODE DATE CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INTERNATIONAL RECTIFIER LOGO IRFU120 12 34 DATE CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = ASS EMBLY SITE CODE ASSEMBLY LOT CODE www.irf.com 7 IRFR/U3704PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRF U120 WITH ASS EMBLY LOT CODE 5678 AS SEMB LED ON WW 19, 1999 IN THE AS SEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFU120 919A 56 78 ASS EMBLY LOT CODE DATE CODE YEAR 9 = 1999 WEEK 19 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRF U120 56 78 AS SEMBLY LOT CODE DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = ASS EMB LY SIT E CODE 8 www.irf.com IRFR/U3704PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A Starting TJ = 25C, L = 0.5 mH RG = 25, IAS = 28.4 A. R is measured at TJ approximately 90C Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/04 www.irf.com 9 |
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